电子面板和半导体

1)基本为真空密封应用,材料为FKM,FKM-GF,FFKM。

2)在电子面板制成FPD的TF、ETCH、Diff工艺中的各个真空泵,管道连接KF/ISO法兰,真空阀门(钟摆阀,狭缝门阀 Slit valve door等)等密封应用,满足耐各类腐蚀性气体,洁净要求。

FPD制程类别工艺制程温度工况条件
TFCVD70~200℃Cl2, O2, SF6, SO2, NF3, BCl3, C2HF5, H2, CHF3, Ar,Cl2, SF6, O2, C2HF, BCl3, CF4
PVDSiH4, NH3, PH3, N2, NF3, Ar, Ph3, H2, N2O
ETCHDry Etching25~150℃TMAH, Photo Resists
Wet EtchingH3PO3, HNO3, CH3COOH, NaOH
Difflon lmplantation25~200℃SC-1, SC-2,, Alkaline, HF,Cl2, SF6, O2, C2HF, BCl3, CF4
DiffusionMonoethanol amine (MEA)

3)在半导体晶圆制成的工艺Plasma Processes、Thermal Processes、Wet Processes中,各个真空获取设备,真空镀膜设备,清洗设备,真空阀门,KF/ISO真空法兰,门阀密封等应用,即要求耐各类腐蚀气体,耐Plasma,耐高温及长效寿命要求,又需要密封圈件High purity,low particle,Low Outgassing(low weight-loss),Low trace metal levels等。

Wafer制程类别工艺制程温度工况条件
Plasma ProcessesEtch25~200℃Cl2,BCl3,NF3,CHF3,HBr,C2F6,O2,CCl4,N2H2,SF6,SiCl4,,N2O,NF3
DieletricEtch25~200℃C2F6,H2,O2,NF3,CHF3,CF4,CHF3,SF6
PECVD25~300℃TMS,TEP,DEMS,TEOS,SiH4,NH3,
HDPCVDSiF4,C3H6,O2,NF3
Ashing/Stripping25~250℃O2,CF4,CHF3,NH3
Thermal ProcessesSACVD25~300℃TEP, TEBO, TEOS, NF3, NH3,O3,O2,N2

Metal CVD & ALD

LPCVD

25~300℃Organic precursors, WF6, SiH6, TMA, DMAH,TiCl4,SiH4,HF,Cl2,SiH2Cl3,ClF3,NF3,H2O Vapour,O2,O3
Lamp annealer RTP150~300℃IR radiaion,O2,Steam
Oxidation diffusion150~300℃N2, O2, H2O, HCl, Cl2,B2H6,PH3,BBr3,POCl3
UV cure150~300℃N2, O2,O3,Ar
Thermal-ALD150~300℃TEOS, SiH4, NH3, SiF4, CF4,NF3
Wet ProcessesWafer Prep25~125℃SC1, SC2, SPM, HF, UPDI
CMP25~100℃KOH, NH3, UPDI
Photolithography125~125℃TMAH, NaOH, H2SO4+Oxidant,Organic acids,NMP,Amines
Stripping25~125℃NMP, MEA, HDMS, DMSO
Cleaning/ Etching25~180℃HCl, HNO3, H3PO4, HF, UPDI ,SC1,SC2,O3
Copper Plating25~100℃CuSO4, H2SO4, H2O2

电子面板和半导体制成用密封件

中心环密封圈

FKM和FFKM

Ultrapure FFKM

ISO CENTER RING

Prod-centering-544

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